2SB647 datasheet(2/6 Pages) RENESAS

номер детали	2SB647

подробное описание детали	Silicon PNP Epitaxial

PDF	6 Pages

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2SB647, 2SB647A

Rev.2.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

2SB647

2SB647A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V(BR)CBO

–120

—

–120

—

IC = –10

µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

–80

—

–100

—

IC = –1 mA, RBE =

∞

Emitter to base

breakdown voltage

V(BR)EBO

–5

—

–5

—

IE = –10

µA, IC = 0

Collector cutoff current

ICBO

—

–10

—

–10

µA

VCB = –100 V, IE = 0

DC current transfer ratio

hFE1*

—

320

—

200

VCE = –5 V,

IC = –150 mA*

hFE2

—

VCE = –5 V,

IC = –500 mA*

Collector to emitter

saturation voltage

VCE(sat)

—

–1

—

–1

IC = –500 mA,

IB = –50 mA*

Base to emitter voltage

VBE

—

–1.5

—

–1.5

VCE = –5 V,

IC = –150 mA*

Gain bandwidth product

—

140

—

140

—

MHz

VCE = –5 V,

IC = –150 mA

Collector output

capacitance

Cob

—

VCB = –10 V, IE = 0

f = 1 MHz

Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows.

2. Pulse test

2SB647

—

100 to 200

160 to 320

2SB647A

60 to 120

100 to 200

—

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