2SB561 datasheet(2/6 Pages) RENESAS

номер детали	2SB561

подробное описание детали	Silicon PNP Epitaxial

PDF	6 Pages

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производитель	RENESAS [Renesas Technology Corp]

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2 / 6 page

2SB561

Rev.2.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

–25

—

IC = –10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

–20

—

IC = –1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

–5

—

IE = –10

µA, IC = 0

Collector cutoff current

ICBO

—

–1.0

µA

VCB = –20 V, IE = 0

DC current transfer ratio

hFE*

—

240

VCE = –1 V,

IC = –0.15 A (Pulse test)

Collector to emitter saturation voltage

VCE(sat)

—

–0.2

–0.5

IC = –0.5 A, IB = –0.05 A

Base to emitter voltage

VBE

—

–0.75

–1.0

VCE = –1 V, IC = –0.15 A

Gain bandwidth product

—

350

—

MHz

VCE = –1 V, IC = –0.15 A

Collector output capacitance

Cob

—

VCB = –10 V, IE = 0

f = 1 MHz

Note:

1. The 2SB561 is grouped by hFE as follows.

85 to 170

120 to 240

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