2SA1030BTZ datasheet(2/6 Pages) RENESAS

номер детали	2SA1030BTZ

подробное описание детали	Silicon PNP Epitaxial

PDF	6 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

Logo

2 / 6 page

2SA1029, 2SA1030

Rev.3.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

2SA1029

2SA1030

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V(BR)CBO

–30

—

–55

—

IC = –10 µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

–30

—

–50

—

IC = –1 mA, RBE =

∞

Emitter to base

breakdown voltage

V(BR)EBO

–5

—

–5

—

IE = –10

µA, IC = 0

Collector cutoff current

ICBO

—

–0.5

—

–0.5

µA

VCB = –18 V, IE = 0

Emitter cutoff current

IEBO

—

–0.5

—

–0.5

µA

VEB = –2 V, IC = 0

DC current trnsfer ratio

hFE*

100

—

500

100

—

320

VCE = –12 V,

IC = –2 mA

Base to emitter voltage

VBE

—

–0.8

—

–0.8

VCE = –12 V,

IC = –2 mA

Collector to emitter

saturation voltage

VCE(sat)

—

–0.2

—

–0.2

IC = –10 mA,

IB = –1 mA

Gain bandwidth product

200

280

—

200

280

—

MHz

VCB = –12 V,

IC = –2 mA

Collector output

capacitance

Cob

—

3.3

4.0

—

3.3

4.0

VCB = –10 V, IE = 0,

f = 1 MHz

Note:

1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.

2SA1029

100 to 200

160 to 320

250 to 500

2SA1030

100 to 200

160 to 320

—

2SA1030BTZ датащи(PDF) 2 Page - Renesas Technology Corp

2SA1030BTZ датащи(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL