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ST13003D-K датащи(PDF) 3 Page - STMicroelectronics

номер детали ST13003D-K
подробное описание детали  High voltage fast-switching NPN power transistor
PDF  8 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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ST13003D-K датащи(HTML) 3 Page - STMicroelectronics

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ST13003D-K
Electrical characteristics
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Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300µs, duty cycle
≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEV
Collector cut-off current
(VBE =-1.5V)
VCE =700V
VCE =700V
Tc = 125°C
1
5
mA
mA
V(BR)EBO
Emitter-Base breakdown
voltage (IC = 0)
IE =10mA
918
V
VCEO(sus)
(1) Collector-emitter
sustaining voltage
(IB = 0)
IC =10mA
400
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 0.5A
_ IB = 0.1A
IC = 1A
_ _ IB = 0.25A
IC = 1.5A _ _ IB = 0.5A
0.5
1
3
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 0.5A
_ IB = 0.1A
IC = 1A
_ _ IB = 0.25A
1
1.2
V
V
hFE
DC current gain
IC =0.5A
VCE =2V
IC =1A
VCE =2V
8
5
20
25
tr
ts
tf
Resistive load
Rise time
Storage time
Fall time
VCC = 125V
IC = 1A
IB1 = 0.2A
IB2 = -0.2A
Tp = 25µs
1
4
0.7
µs
µs
µs
ts
Inductive load
Storage time
IC = 1A
IB1 = 0.2A
VBE =-5V
L =50mH
VClamp =300V
0.8
µs
VF
Diode forward voltage
IC = 0.5A
1.5
V



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