BU508AF datasheet(1/11 Pages) STMICROELECTRONICS

номер детали	BU508AF

подробное описание детали	High voltage NPN power transistor for standard definition CRT display

PDF	11 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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1 / 11 page

August 2007

Rev 2

1/11

11

BU508AF

High voltage NPN power transistor for standard

definition CRT display

Features

■ State-of-the-art technology:

– Diffused collector “Enhanced generation”

■ Stable performances versus operating

temperature variation

■ Low base-drive requirement

■ Tight hFE range at operating collector current

■ High ruggedness

■ Fully insulated power package U.L. compliant

Applications

■ Horizontal deflection output for CRT TV

■ Switch mode power supplies for CRT TV

Description

The BU508AF is manufactured using diffused

collector in planar technology adopting new and

enhanced high voltage structure for updated

performance to the horizontal deflection stage.

Figure 1.

Internal schematic diagram

ISOWATT218FX

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

BU508AF

ISOWATT218FX

Tube

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Аналогичный номер детали - BU508AF

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BU508AF	61Kb / 7P	Silicon Diffused Power Transistor July 1998 Rev 1.200
Wing Shing Computer Com...	BU508AF	142Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Fairchild Semiconductor	BU508AF	51Kb / 4P	TV Horizontal Output Applications
Continental Device Indi...	BU508AF	40Kb / 3P	NPN POWER TRANSISTORS
STMicroelectronics	BU508AF	99Kb / 8P	High voltage NPN Power transistor for standard Definition CRT display 02-Mar-2007

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Аналогичное описание - BU508AF

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BU508AF датащи(PDF) 1 Page - STMicroelectronics

BU508AF датащи(HTML) 1 Page - STMicroelectronics

Аналогичный номер детали - BU508AF

Аналогичное описание - BU508AF

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