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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MRF21045LSR3 датащи(PDF) 6 Page - Freescale Semiconductor, Inc |
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MRF21045LSR3 датащи(HTML) 6 Page - Freescale Semiconductor, Inc |
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6 / 12 page  6 RF Device Data Freescale Semiconductor MRF21045LR3 MRF21045LSR3 TYPICAL CHARACTERISTICS 29 34 42 24 −32 −24 η IMD IDQ = 500 mA Pout = 45 W (PEP) f1 = 2135 MHz, f2 = 2145 MHz 41 −25 40 −26 39 −27 38 −28 37 −29 36 −30 35 −31 28 27 26 25 60 12.5 15.5 2 0 60 Gps η VDD = 28 Vdc IDQ = 500 mA f = 2170 MHz 15 50 14.5 40 14 30 13.5 20 13 10 50 30 10 8 6 4 2190 14 28 2090 −45 −10 IRL Gps η ACPR IM3 VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) 26 −15 24 −20 22 −25 20 −30 18 −35 16 −40 2170 2150 2130 2110 60 −65 −25 3 5 45 7th Order η 3rd Order 5th Order −30 −35 −40 −45 −50 −55 −60 40 35 30 25 20 15 10 46 8 10 50 30 Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Pout, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation Distortion Products versus Output Power f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) VDD, DRAIN SUPPLY (V) Figure 7. CW Performance 60 −50 −25 4 −30 −35 −40 −45 50 30 10 8 6 IDQ = 300 mA 700 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 600 mA 400 mA 500 mA 20 0 30 0.5 −55 −25 Gps η ACPR IM3 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA −35 −30 −45 −40 −50 25 20 15 10 5 10 1 Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) |
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