BUL510 datasheet(2/6 Pages) STMICROELECTRONICS

номер детали	BUL510

подробное описание детали	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.25

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1000 V

Tc = 125

o C

100

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 450 V

250

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

450

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 3 A

IB = 0.6 A

IC = 4 A

IB = 0.8 A

IC = 5 A

IB = 1.25 A

0.8

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 3 A

IB = 0.6 A

IC = 5 A

IB = 1.25 A

1.2

1.5

hFE

∗

DC Current Gain

IC = 1 A

VCE = 5 V

IC = 10 mA

VCE = 5 V

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4 A

VCL = 300 V

IB1 = 0.8 A

IB2 = -1.6 A

L = 200

µH

2.2

3.4

150

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4 A

VCL = 300 V

IB1 = 0.8 A

IB2 = -1.6 A

L = 200

µH

Tc = 125

120

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL510

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