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BF420-AP датащи(PDF) 2 Page - STMicroelectronics

номер детали BF420-AP
подробное описание детали  SMALL SIGNAL NPN TRANSISTOR
PDF  5 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BF420-AP датащи(HTML) 2 Page - STMicroelectronics

  BF420-AP Datasheet HTML 1Page - STMicroelectronics BF420-AP Datasheet HTML 2Page - STMicroelectronics BF420-AP Datasheet HTML 3Page - STMicroelectronics BF420-AP Datasheet HTML 4Page - STMicroelectronics BF420-AP Datasheet HTML 5Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
•
Rthj-Case
•
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Case
Max
150
50
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 200 V
VCB = 200 V
TC = 150
oC
VCB = 300 V
10
10
100
nA
µA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
50
nA
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
300
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
300
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100
µA
5V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 30 mA
IB = 5 mA
0.6
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 30 mA
IB = 5 mA
1.2
V
hFE
∗
DC Current Gain
IC = 25 mA
VCE = 20 V
50
fT
Transition Frequency
IC = 10 mA VCE = 10 V
f =20 MHz
60
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
6
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 2 V f = 1MHz
22
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
BF420
2/5



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