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STGPL6NC60D датащи(PDF) 4 Page - STMicroelectronics

номер детали STGPL6NC60D
подробное описание детали  600 V - 6 A hyper fast IGBT
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGPL6NC60D датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGBL6NC60D - STGDL6NC60D - STGPL6NC60D - STGFL6NC60D
4/19
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 1 mA
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC= 3 A
VGE= 15 V, IC= 3 A,@ 125 °C
VGE = 15 V, IC= 1.5 A
2.3
2.1
2.0
2.9
V
V
V
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
3.75
5.75
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 VTC= 125 °C
50
5
µA
mA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20 V
±100
nA
gfs
Forward transconductance
VCE = 15 V, IC= 3 A
3S
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
208
32.5
5.4
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 390 V, IC = 3 A,
VGE = 15 V
(see Figure 17)
12
2.6
4.9
nC
nC
nC



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