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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L5980 датащи(PDF) 13 Page - STMicroelectronics |
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L5980 датащи(HTML) 13 Page - STMicroelectronics |
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13 / 37 page  Functional description L5980 13/37 Figure 8. Over current protection strategy 4.5 Inhibit function The inhibit feature allows to put in stand-by mode the device.With INH pin higher than 1.9 V the device is disabled and the power consumption is reduced to less than 30 μA. With INH pin lower than 0.6 V, the device is enabled. If the INH pin is left floating, an internal pull up ensures that the voltage at the pin reaches the inhibit threshold and the device is disabled. The pin is also VCC compatible. 4.6 Hysteretic thermal shutdown The thermal shutdown block generates a signal that turns off the power stage if the junction temperature goes above 150 °C. Once the junction temperature goes back to about 130 °C, the device restarts in normal operation. The sensing element is very close to the PDMOS area, so ensuring an accurate and fast temperature detection. |
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