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33290 датащи(PDF) 5 Page - Freescale Semiconductor, Inc |
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33290 датащи(HTML) 5 Page - Freescale Semiconductor, Inc |
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5 / 12 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 5 33290 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted. Characteristic Symbol Min Typ Max Unit POWER AND CONTROL VDD Sleep State Current Tx = 0.8 VDD, CEN = 0.3 VDD IDD(SS) – – 0.1 mA VDD Quiescent Operating Current Tx = 0.2 VDD, CEN = 0.7 VDD IDD(Q) – – 1.0 mA VBB Sleep State Current VBB = 16 V, Tx = 0.8 VDD, CEN = 0.3 VDD IBB(SS) – – 50 µA VBB Quiescent Operating Current TX = 0.2 VDD, CEN = 0.7 VDD IBB(Q) – – 1.0 mA Chip Enable Input High-Voltage Threshold (8) Input Low-Voltage Threshold (9) VIH(CEN) VIL(CEN) 0.7 VDD – – – – 0.3 VDD V Chip Enable Pull-Down Current (10) IPD(CEN) 2.0 – 40 µA TX Input Low-Voltage Threshold RISO = 510 Ω (11) VIL(Tx) – – 0.3 x VDD V TX Input High-Voltage Threshold RISO = 510 Ω (12) VIH(Tx) 0.7 x VDD – – V TX Pull-Up Current (13) IPU(Tx) -40 – -2.0 µA RX Output Low-Voltage Threshold RISO = 510 Ω, TX = 0.2 VDD, Rx Sinking 1.0 mA VOL(Rx) – – 0.2 VDD V RX Output High-Voltage Threshold RISO = 510 Ω, TX = 0.8 VDD, RX Sourcing 250 µA VOH(Rx) 0.8 VDD – – V Thermal Shutdown (14) TLIM 150 170 – °C Notes 8. When IBB transitions to >100 µA. 9. When IBB transitions to <100 µA. 10. Enable pin has an internal current pull-down. Pull-down current is measured with CEN pin at 0.3 VDD. 11. Measured by ramping TX down from 0.7 VDD and noting TX value at which ISO falls below 0.2 VBB. 12. Measured by ramping TX up from 0.3 VDD and noting the value at which ISO rises above 0.9 VBB. 13. Tx pin has internal current pull-up. Pull-up current is measured with TX pin at 0.7 VDD. 14. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested. |
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