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L5986 датащи(PDF) 27 Page - STMicroelectronics |
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L5986 датащи(HTML) 27 Page - STMicroelectronics |
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27 / 39 page ![]() L5986 - L5986A Application information 27/39 6.5 Thermal considerations The thermal design is important to prevent the thermal shutdown of device if junction temperature goes above 150 °C. The three different sources of losses within the device are: a) conduction losses due to the not negligible RDS(on) of the power switch; these are equal to: Equation 26 Where D is the duty cycle of the application and the maximum RDS(on) over temperature is 220 m Ω. Note that the duty cycle is theoretically given by the ratio between V OUT and VIN, but actually it is quite higher to compensate the losses of the regulator. So the conduction losses increases compared with the ideal case. b) switching losses due to power MOSFET turn ON and OFF; these can be calculated as: Equation 27 Where TRISE and TFALL are the overlap times of the voltage across the power switch (VDS) and the current flowing into it during turn ON and turn OFF phases, as shown in Figure 15. TSW is the equivalent switching time. For this device the typical value for the equivalent switching time is 50 ns. c) Quiescent current losses, calculated as: Equation 28 where IQ is the quiescent current (IQ = 2.4 mA). The junction temperature TJ can be calculated as: Equation 29 Where TA is the ambient temperature and PTOT is the sum of the power losses just seen. RthJA is the equivalent thermal resistance junction to ambient of the device; it can be calculated as the parallel of many paths of heat conduction from the junction to the ambient. For this device the path through the exposed pad is the one conducting the largest amount P ON R DSON I OUT () 2 D ⋅⋅ = P SW V IN I OUT T RISE T FALL + () 2 ------------------------------------------- Fsw ⋅⋅ ⋅ V IN I OUT T SW F SW ⋅⋅ ⋅ == P Q V IN I Q ⋅ = T J T A Rth JA P TOT ⋅ + = |
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