STP6N60FI datasheet(1/9 Pages) STMICROELECTRONICS

номер детали	STP6N60FI

подробное описание детали	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STP6N60FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) =1

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR

INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STP6N60FI

600 V

< 1. 2

Ω

3.8 A

1

2

3

ISOWATT220

May 1993

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Voltage (VGS = 0)

600

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (cont inuous) at T c =25

oC3.8

A

ID

Drain Current (cont inuous) at T c =100

oC2.4

A

IDM(

•)

Drain Current (pulsed)

24

A

Ptot

Total Dissipation at Tc =25

oC40

W

Derating Factor

0. 32

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)

2000

V

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1/9

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Inchange Semiconductor ...	STP6N60FI	318Kb / 2P	isc N-Channel MOSFET Transistor

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STP6N60FI датащи(PDF) 1 Page - STMicroelectronics

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Аналогичный номер детали - STP6N60FI

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