5NB90 datasheet(1/6 Pages) STMICROELECTRONICS

номер детали	5NB90

подробное описание детали	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

PDF	6 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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STP5NB90

STP5NB90FP

N - CHANNEL 900V - 2.3

Ω - 5A - TO-220/TO-220FP

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 2.3

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY(UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

September 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP5NB90

STP5NB90F P

VDS

Drain-source Voltage (VGS =0)

900

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

900

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC5

5(*)

A

ID

Drain Current (continuous) at Tc =100

oC3.1

3.1(*)

A

IDM (

•)

Drain Current (pulsed)

20

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating Factor

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤5 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P5NB90

ST P5NB90FP

900 V

<2.5

Ω

<2.5

Ω

5A

1/6

Аналогичное описание - 5NB90

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP3NB100	44Kb / 6P	N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET Oct-1998
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP3NB90	85Kb / 6P	N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET Oct-1998
	STP3NC90Z	335Kb / 11P	N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ II MOSFET Jan-2001
	STP5NB100	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Feb-2000
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP6NB90	109Kb / 9P	N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET Jun-1999
	STP9NB50	108Kb / 9P	N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET May-2000
	STP5NK90Z	342Kb / 12P	N-CHANNEL 900V - 2ohm - 4.5A TO-220/TO-220FP 06-Sep-2005

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