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ADA4420-6ARQZ-R71 датащи(PDF) 4 Page - Analog Devices |
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ADA4420-6ARQZ-R71 датащи(HTML) 4 Page - Analog Devices |
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4 / 12 page ![]() ADA4420-6 Rev. 0 | Page 4 of 12 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Supply Voltage 5.5 V Power Dissipation See Figure 2 Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the device soldered to a high thermal conductivity 4-layer (2s2p) circuit board, as described in EIA/JESD 51-7. Table 3. Package Type θJA θJC Unit 16-Lead QSOP 105 23 °C/W MAXIMUM POWER DISSIPATION The maximum safe power dissipation in the ADA4420-6 package is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the ADA4420-6. Exceeding a junction temperature of 150°C for an extended time can result in changes in the silicon devices, potentially causing failure. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The power dissipated due to load drive depends on the particular application. For each output, the power due to load drive is calculated by multiplying the load current by the associated voltage drop across the device. The power dissipated due to the loads is equal to the sum of the power dissipations due to each individual load. RMS voltages and currents must be used in these calculations. Airflow increases heat dissipation, effectively reducing θJA. Figure 2 shows the maximum power dissipation in the package vs. the ambient temperature for the 16-lead QSOP (105°C/W) on a JEDEC standard 4-layer board. θJA values are approximate. 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1020304050607080 90 100 AMBIENT TEMPERATURE (°C) Figure 2. Maximum Power Dissipation vs. Ambient Temperature for a 4-Layer Board ESD CAUTION |
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