SMP30-200 datasheet(3/9 Pages) STMICROELECTRONICS

номер детали	SMP30-200

подробное описание детали	TRISIL FOR TELECOM EQUIPMENT PROTECTION

PDF	9 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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SMP30

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Table 4: Thermal Resistances

Table 5: Electrical Characteristics (Tamb = 25°C)

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (with recommended footprint)

120

°C/W

Rth(j-l)

Junction to leads

°C/W

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VBO

Breakover voltage

IRM

Leakage current

IPP

Peak pulse current

IBO

Breakover current

Holding current

Continuous reverse voltage

Leakage current at VR

Capacitance

Types

IRM @ VRM

IR @ VR

Dynamic

VBO

Static

VBO @ IBO

max.

min.

typ.

note1

note 2

note 3

note 4

note 5

note 6

µAVµAV

SMP30-62

800

150

SMP30-68

SMP30-100

100

135

133

SMP30-120

108

120

160

SMP30-130

117

130

173

SMP30-180

162

180

235

240

SMP30-200

180

200

262

267

SMP30-220

198

220

285

293

SMP30-240

216

240

300

320

SMP30-270

243

270

350

360

Note 1: IR measured at VR guarantee VBR min

≥ VR

Note 2: see functional test circuit 1

Note 3: see test circuit 2

Note 4: see functional holding current test circuit 3

Note 5: VR = 50V bias, VRMS=1V, F=1MHz

Note 6: VR = 2V bias, VRMS=1V, F=1MHz

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