V62C3161024L datasheet(1/10 Pages) MOSEL

номер детали	V62C3161024L

подробное описание детали	Ultra Low Power 64K x 16 CMOS SRAM

PDF	10 Pages

Scroll/Zoom	100%

производитель	MOSEL [Mosel Vitelic, Corp]

домашняя страница	http://www.moselvitelic.com

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1 / 10 page

Memory Array

1024 X 1024

I/O Circuit

Pre-Charge Circuit

Column Select

Data

Cont

Data

Cont

Vcc

Vss

A10 A11 A12 A13 A14 A15

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

I/O1 - I/O8

I/O9 - I/O16

WE

OE

BLE

BHE

CE

1

2

3

12

10

11

8

39

13

9

7

6

4

5

26

25

24

23

22

21

14

15

16

17

18

19

20

40

41

42

43

44

38

37

36

35

34

33

32

31

30

29

28

27

A9

A8

A7

A6

A5

A4

A3

A2

A1

WE

I/O8

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

A0

CE

Vss

Vcc

NC

A15

A14

A13

A12

A11

A10

I/O16

I/O15

I/O14

I/O13

I/O12

I/O11

I/O10

I/O9

NC

Vss

Vcc

BHE

BLE

OE

V62C3161024L(L)

Ultra Low Power

64K x 16 CMOS SRAM

Features

• Ultra Low-power consumption

- Active: 40mA ICC at 55ns

- Stand-by: 5

µA (CMOS input/output)

1

µA (CMOS input/output, L version)

• 55/70/85/100 ns access time

• Equal access and cycle time

• Single +2.7V to 3.3V Power Supply

• Tri-state output

• Automatic power-down when deselected

• Multiple center power and ground pins for

improved noise immunity

• Individual byte controls for both Read and

Write cycles

• Available in 44 pin TSOP (II) Package

Functional Description

TheV62C3161024L is a Low Power CMOS Static RAM

organized as 65,536 words by 16 bits. Easy memory exp-

ansion is provided by an active LOW (CE) and (OE) pin.

This device has an automatic power-down mode feature

when deselected. Separate Byte Enable controls (BLE

and BHE) allow individual bytes to be accessed. BLE

controls the lower bits I/O1 - I/O8. BHE controls the

upper bits I/O9 - I/O16.

Writing to these devices is performed by taking Chip

Enable (CE) with Write Enable (WE) and Byte Enable

(BLE/BHE) LOW.

Reading from the device is performed by taking Chip

Enable (CE) with Output Enable (OE) and Byte Enable

(BLE/BHE) LOW while Write Enable (WE) is held

HIGH.

TSOP(II)

Logic Block Diagram

REV. 1.1 April 2001 V62C3161024L(L)

1

Аналогичный номер детали - V62C3161024L

производитель	номер детали	датащи	подробное описание детали
Mosel Vitelic, Corp	V62C3162048L	109Kb / 13P	Ultra Low Power 128K x 16 CMOS SRAM
	V62C3162048L-100T	109Kb / 13P	Ultra Low Power 128K x 16 CMOS SRAM
	V62C3162048L-35T	109Kb / 13P	Ultra Low Power 128K x 16 CMOS SRAM
	V62C3162048L-45T	109Kb / 13P	Ultra Low Power 128K x 16 CMOS SRAM
	V62C3162048L-55T	109Kb / 13P	Ultra Low Power 128K x 16 CMOS SRAM

More results

Аналогичное описание - V62C3161024L

производитель	номер детали	датащи	подробное описание детали
Mosel Vitelic, Corp	V62C1161024L	119Kb / 10P	Ultra Low Power 64K x 16 CMOS SRAM
Mosel Vitelic, Corp	V62C2161024L	88Kb / 10P	Ultra Low Power 64K x 16 CMOS SRAM
Brilliance Semiconducto...	BS616UV1010	216Kb / 10P	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
Brilliance Semiconducto...	BS616UV1010	207Kb / 11P	Ultra Low Power CMOS SRAM 64K X 16 bit
Lyontek Inc.	LY62L6416	178Kb / 13P	64K X 16 BIT LOW POWER CMOS SRAM
Brilliance Semiconducto...	BS616UV1010	245Kb / 11P	Ultra Low Power CMOS SRAM 64K X 16 bit
Lyontek Inc.	LY62L6416_1008	222Kb / 13P	64K X 16 BIT LOW POWER CMOS SRAM
	LY62W6416	500Kb / 13P	64K X 16 BIT LOW POWER CMOS SRAM
	LY626416_1008	281Kb / 14P	64K X 16 BIT LOW POWER CMOS SRAM
	LY62L6416	695Kb / 15P	64K X 16 BIT LOW POWER CMOS SRAM

More results

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