TN12 datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Characteristics

TN12, TS12 and TYNx12 Series

4/12

Figure 3.

Average and D.C. on-state current

versus ambient temperature

(device mounted on FR4 with

recommended pad layout) (DPAK)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

(A)

T(AV)

(°C)

amb

α = 180°

D.C.

DPAK

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

K=[Z

th(j-c)

th(j-c)]

t (s)

Figure 5.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

(recommended pad layout, FR4 PC

board for DPAK)

Figure 6.

Relative variation of gate trigger

current and holding current versus

junction temperature for TS12

series

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z

th(j-a)

th(j-a)]

t (s)

DPAK

TO-220AB / IPAK

DPAK

-40

-20

100

120

140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

T (°C)

I,I ,I [T ] /

GTHL

,I ,I [T =25°C]

GT H L

IGT

IH & I

= 1k

Figure 7.

Relative variation of gate trigger

current and holding current versus

junction temperature for TN12 and

TYNx12 series

Figure 8.

Relative variation of holding

current versus gate-cathode

resistance (typical values) for TS12

series

-40

-20

100

120

140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

T (°C)

IGT

IH & IL

1E-2

1E-1

1E+0

1E+1

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

R(k )

I [R

] / I [

=1k ]

HGK

RGK

Tj = 25°C

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