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ITA6V5B3 датащи(PDF) 2 Page - STMicroelectronics |
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ITA6V5B3 датащи(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics ITAxxB3 2/8 1 Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit PPP Peak pulse power (8/20 µs)(1) 1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. Tj initial = Tamb 300 W IPP Peak pulse current (8/20 µs)(1) Tj initial = Tamb 40 A I2tWire I2t value(1) 0.6 A2s Tj Maximum operating junction temperature 125 °C Tstg Storage temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Order code VBR @ IR IRM @ VRM VCL @ IPP VCL @ IPP αTC min. max. 8/20 µs max. 8/20 µs max. max. (1) 1. Between I/O pin and ground. (1) (1) (2) 2. Between two input pins at 0 V Bias, F = 1 MHz. V mA µA V V AVA 10-4/°C pF ITA6V5B3 6.5 1 10 5 9.5 10 121 25 4 1100 ITA18B3 18 1 4 15 21102625 9 500 ITA25B3 25 1 4 24 31103625 12 420 VBR VCL VRM IRM IPP I V |
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