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STP16N10L датащи(PDF) 1 Page - STMicroelectronics |
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STP16N10L датащи(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() STP16N10L N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR s TYPICAL RDS(on) = 0.14 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s HIGH CURRENT CAPABILITY s 175 oC OPERATING TEMPERATURE s HIGH dV/dt RUGGEDNESS s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k Ω)100 V VGS Gate-source Voltage ± 15 V ID Drain Current (continuous) at Tc = 25 oC16 A ID Drain Current (continuous) at Tc = 100 oC11 A IDM( •) Drain Current (pulsed) 64 A Ptot Total Dissipation at Tc = 25 oC90 W Derating Factor 0.4 W/ o C dV/dt(1) Peak Diode Recovery voltage slope 0.6 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C TYPE VDSS RDS(on) ID STP16N10L 100 V < 0.16 Ω 16 A March 1999 1 2 3 TO-220 1/5 |
Аналогичный номер детали - STP16N10L |
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Аналогичное описание - STP16N10L |
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