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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFIB7N50LPBF датащи(PDF) 2 Page - International Rectifier |
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IRFIB7N50LPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFIB7N50LPbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 12). Starting T J = 25°C, L = 24mH, RG = 25Ω, IAS = 6.8A, (See Figure 14). I SD ≤ 6.8, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, dv/dt = 24V/ns, TJ ≤ 150°C. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.44 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.32 0.38 Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 50 µA ––– ––– 2.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.88 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 4.7 ––– ––– S Qg Total Gate Charge ––– ––– 92 Qgs Gate-to-Source Charge ––– ––– 24 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 44 td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 36 ––– ns td(off) Turn-Off Delay Time ––– 47 ––– tf Fall Time ––– 19 ––– Ciss Input Capacitance ––– 2220 ––– Coss Output Capacitance ––– 230 ––– Crss Reverse Transfer Capacitance ––– 23 ––– Coss Output Capacitance ––– 2780 ––– pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 63 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 140 ––– Coss eff. (ER) Effective Output Capacitance ––– 100 ––– (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Units EAS Single Pulse Avalanche Energy d ––– mJ IAR Avalanche Current à ––– A EAR Repetitive Avalanche Energy ––– mJ Thermal Resistance Symbol Parameter Typ. Units RθJC Junction-to-Case ––– °C/W RθJA Junction-to-Ambient ––– VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 4.1A f VGS = 30V f = 1MHz, open drain Conditions VDS = 50V, ID = 4.1A VGS = -30V ID = 6.8A VDS = 400V VGS = 10V, See Fig. 7 & 16 f VDD = 250V ID = 6.8A RG = 9.0Ω VGS = 10V, See Fig. 11a & 11b f VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 6.8 4.6 Max. 550 VGS = 0V,VDS = 0V to 400V g 65 Max. 2.69 |
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