CR12AM datasheet(2/6 Pages) MITSUBISHI

номер детали	CR12AM

подробное описание детали	MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

PDF	6 Pages

Scroll/Zoom	100%

производитель	MITSUBISHI [Mitsubishi Electric Semiconductor]

домашняя страница	http://www.mitsubishichips.com

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2 / 6 page

Feb.1999

MITSUBISHI SEMICONDUCTOR

〈THYRISTOR〉

CR12AM

MEDIUM POWER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

V1. The contact thermal resistance Rth (c-f) is 1.0

°C/W with greased.

ELECTRICAL CHARACTERISTICS

Test conditions

Tj=125

°C, VRRM applied

Tj=125

°C, VDRM applied

Tc=25

°C, ITM=40A,

Tj=25

°C, VD=6V, IT=1A

Tj=125

°C, VD=1/2VDRM

Tj=25

°C, VD=6V, IT=1A

Tj=25

°C, VD=12V

Junction to case

Unit

°C/W

Typ.

—

Symbol

IRRM

IDRM

VTM

VGT

VGD

IGT

Rth (j-c)

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Holding current

Thermal resistance

Limits

Min.

—

0.2

—

Max.

2.0

1.6

1.5

—

1.2

100

5 7 101

160

5 7 102

240

320

400

120

200

280

360

3.8

0.6

1.4

2.2

3.0

1.0

1.8

2.6

3.4

103

102

101

100

Tc = 25°C

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

PERFORMANCE CURVES

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