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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STN2NE10 датащи(PDF) 1 Page - STMicroelectronics |
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STN2NE10 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.33 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size ™ " stip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STN2NE10 100 V < 0.4 Ω 2 A January 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 o C2 A ID Drain Current (continuous) at Tc = 100 oC1.3 A IDM( •) Drain Current (pulsed) 8 A Ptot Total Dissipation at Tc = 25 oC2.5 W Derating Factor 0.02 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX New RDS (on) spec. starting from JULY 98 1 2 2 3 SOT-223 1/5 |
Аналогичный номер детали - STN2NE10 |
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Аналогичное описание - STN2NE10 |
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