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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM901-30 датащи(PDF) 2 Page - STMicroelectronics |
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STM901-30 датащи(HTML) 2 Page - STMicroelectronics |
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2 / 8 page  ELECTRICAL SPECIFICATIONS (Tcase =25 °C, VD,VC1,VC2 = 26V) (IDQ1 = 100mA, IDQ2 = 180mA, ICQ1 =50mA, ICQ2 =150mA) Symbol Parameter T est Cond iti ons Value Un it Min. Typ. Max. BW Frequency Range 860 — 900 MHz GP Power Gain POUT = +44.7 dBm PEP 35 38 — dB ηdt* Double-Tone Efficiency POUT = +44.7 dBm PEP 27 30 — % Input VSWR POUT = +44.7 dBm PEP — 1.5:1 3:1 IMD* Intermodulation Distortion POUT = +44.7 dBm PEP — −33 −26 dBT** — Load Mismatch VSWR = 5:1 V = 26Vdc POUT = +44.7 dBm PEP No Degradation in Output Power Note: * Two- Tone test; 20 KHz separation ** dBT - i n dB, refer enced to tone level (See Figure 1 below) 20 kHz PEP (Peak Envelope Power) Carrier Level Total Avg. Power of Two Tone AVERAGE Power of Ea ch Tone 3 dB min 3 dB min 26 dB min freq Max IMD in dBT Figure 1 STM901-30 2/8 October 31, 1997 |
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