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STLC1511 датащи(PDF) 16 Page - STMicroelectronics

номер детали STLC1511
подробное описание детали  NorthenLite 1.0 G.lite BiCMOS Analog Front-End Circuit
PDF  31 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STLC1511 датащи(HTML) 16 Page - STMicroelectronics

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3.4.3 Customer Premise Equipment
In CPE mode, the STLC1511 provides the amplifier
required to power the off-chip crystal oscillator. The
crystal oscillator runs at a frequency of 35.328 MHz
(series resonant) which is further divided down to
provide the sampling clocks to both the TX and RX
converters and passed to the STLC1510 as its PLL
reference on the pin DIGREF. Note that in CPE
mode, neither the PLL or the pin FREF is used (FREF
should be connected to either Vdd or Vss) and that
the tuing for the external oscillator is generated on
the STLC1510.
The following table details the CPE oscillator perfor-
mance when connected as shown in Figure 3. on
page 14. CPE mode is selected by setting b5:b0 in
register “AFE Control 5” to “001110”. See section
"Digital Interface And Memory Map" on page 20 for
more information.
Note the reference design provided is based on a
Reeves Hoffman fundamental Mode AT cut crystal at
35.328MHz.(Crystal accuracy@+/-50ppm (+/-15ppm
calibration tolerance, +/-15ppm 10 year aging, +/-20
ppm
temperature
variation,
Rs@15
max,
Cm@15fF max, and Co@3.5pF typ (assumes a
HC49/43 package).)
Table 6. CPE PLL Specifications
Unless otherwise noted, typical specifications apply for VCC=5.0 V, temperature = 25×C, nominal process and bias
current. Maximum and minimum performance is with VCC ± 5%, -40 =< Tjunction =< 105×C, and worst case process.
Description
min
typ
max
Units
Comments
Output Clock Frequency
35.328
MHz
at pin DIGREF
Crystal Accuracy1 2
-50
+50
ppm
crystal accuracy for CPE.
Crystal Frequency Tuning
Range2 3
-125
+125
ppm
Occurs at CPE. Assumes
CO is free running
Oscillator Signal Level
200
500
mVp
Power Up Time
5
10
msec
VCO Gain
Vcxo gain (crystal)
1.4
1.6
1.7
KHz/V
see TITLE 2 3.5 on page 18
Input Impedance @OSCPB
and OSCNB4
see TITLE 3 3.4.3 on page
16
Output Impedance @OSCPE
and OSCNE4
see TITLE 3 3.4.3 on page
16
CPE Phase Noise at fs
5
10Hz offset
20Hz offset
40Hz offset
60Hz offset
80Hz offset
100Hz offset
200Hz offset
400Hz offset
600Hz offset
800Hz offset
1000Hz offset
-51.9
-57.9
-63.9
-67.5
-69.9
-71.9
-77.9
-83.9
-87.5
-89.9
-91.9
dBc/Hz
Phase noise at DIGREF
output (i.e. 35.328MHz) in
CPE mode.
<1>For the CPE side a crystal oscillator will be used.
<2>50ppm accuracy is divided as ±15ppm for manufacture, ± 15ppm for 10 year drift, and ± 20ppm for temperature variation.
<3>Worst case for tuning is when CO is not locked and CPE must retime from CO. Nominally the tuning range for the CO is ±50ppm,
so that if the CO is free running, the CPE must tune over the CO inaccuracy and the CPE crystal inaccuracy as well.
<4>Input and output impedance measured with 50kW from OSCPB to Vcc and OSCNB to Vcc
<5>For inband noise, phase noise at multiples of 4.3125kHz will rms add to degrade the inband SNR. Similarly, for out of band signals,
phase noise will rms add depending on the offset between the carrier and the band of interest to reduce the SNR. For example,
noise contributions on carriers from 34 to 127 will rms add to degrade the SNR on the edge of the US band (carrier 26).



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