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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STLC1PD датащи(PDF) 5 Page - STMicroelectronics |
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STLC1PD датащи(HTML) 5 Page - STMicroelectronics |
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5 / 16 page  STLC1 5/16 ELECTRICAL CHARACTERISTICS FOR LOW SIDE DRIVER SECTION (TJ=-40 to 125°C unless otherwise specified. Typical values are referred at TJ=25°C, VB+=14V) Symbol Parameter Test Conditions Min. Typ. Max. Unit R(on) Static drain to source LSD N-channel switch on resistance VB+ =9V, VTURN =VB+ VTR-L =0V ITR-DRV=1A 500 m Ω VSTOP =VB+ VST-L =0V IST-DRV=1A 500 m Ω VTAIL =VB+ VTL-L =0V ITL-DRV=1A 500 m Ω ILSD(off) OFF State LSD’S leakage current VTURN =VSTOP =VTAIL =0V VTR-DRV =VST-DRV =VTL-DRV =VB+ 10 µA tLSD-ON LSD Turn On Delay CREF =1µFCOUT = 220µF (see note 2,4 and Fig 1, 2) 2ms VLS-ON FDBK Voltage over which LSD’s are enabled 0.95VFB V VLS-OFF FDBK Voltage over which LSD’s are disabled 0.5VFB V fLSD Pulse Width Controller Internal Oscillator Frequency VTAIL =VB+ VTS-PWM =VREF/2 200 380 500 Hz VIN(ON) Input Threshold voltage to enable LSD VB+ = 9 to 16V 0.6VB+ V VIN(OFF) Input Threshold voltage to disable LSD VB+ = 9 to 16V 0.4VB+ V |
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