STL35NF3LL datasheet(1/6 Pages) STMICROELECTRONICS

номер детали	STL35NF3LL

подробное описание детали	N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET

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TARGET DATA

October 2001

STL35NF3LL

N-CHANNEL 30V - 0.0055

Ω - 35A PowerFLAT™

LOW GATE CHARGE STripFET™ MOSFET

(1)ISD<35A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX

(2) Starting Tj = 25°C, ID = 30A, VDD = 27.5V

s

TYPICAL RDS(on) = 0.0055Ω

s

IMPROVED DIE-TO-FOOTPRINT RATIO

s

VERY LOW PROFILE PACKAGE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “STripFET™” technolo-

gy. The resulting transistor shows extremely low on-

resistance and minimal gate charge. The new Pow-

erFLAT™ package allows a significant reduction in

board space without compromising performance.

APPLICATIONS

s

DC-DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

(#) Limited by Wire Bonding

TYPE

VDSS

RDS(on)

ID

STL35NF3LL

30 V

< 0.007

Ω

35 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 15

V

ID(#)

Drain Current (continuos) at TC = 25°C

Drain Current (continuos) at TC = 100°C

35

22

A

IDM (q)

Drain Current (pulsed)

140

A

PTOT

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.64

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

TBD

V/ns

EAS (2)

Single Pulse Avalanche Energy

TBD

J

Tstg

Storage Temperature

–55 to 150

°C

Tj

Max. Operating Junction Temperature

PowerFLAT™(6x5)

(Chip Scale Package)

INTERNAL SCHEMATIC DIAGRAM

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STMicroelectronics	STL35NF10	165Kb / 6P	N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET Aug-2001

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Аналогичное описание - STL35NF3LL

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