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STTH1R04Q датащи(PDF) 2 Page - STMicroelectronics |
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STTH1R04Q датащи(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Characteristics STTH1R04 2/10 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.250 x IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(AV) Average forward current, δ = 0.5 DO-41 Tlead = 100 °C 1.0 A DO-15 Tlead = 105 °C SMA Tlead = 125 °C SMB Tlead = 140 °C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 30 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(1) 1. On infinite heatsink with 10 mm lead length 175 °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-l) Junction to lead Lead length = 10 mm on infinite heatsink DO-41 55 °C/W DO-15 50 Rth(j-l) Junction to lead SMA 35 SMB 25 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2 % Reverse leakage current Tj = 25 °C VR = VRRM 5 µA Tj = 125 °C 5 50 VF (2) 2. Pulse test: tp = 380 µs, δ < 2 % Forward voltage drop Tj = 25 °C IF = 1.0 A 1.5 V Tj = 100 °C 1.0 1.25 Tj = 150 °C 0.9 1.15 |
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