STTH12002TV datasheet(2/5 Pages) STMICROELECTRONICS

номер детали	STTH12002TV

подробное описание детали	HIGH EFFICIENCY ULTRAFAST DIODE

PDF	5 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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2 / 5 page

STTH12002TV

2/5

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

current

Tj = 25°C

VR =VRRM

µA

Tj = 125°C

500

VF**

Forward voltage drop

Tj = 25°C

IF =60 A

1.05

Tj = 25°C

IF = 120 A

1.15

Tj = 150°C

IF =60 A

0.73

0.82

Tj = 150°C

IF = 120 A

0.98

Pulse test: * tp = 5ms,

δ <2%

** tp = 380µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

P = 0.66 x IF(AV) + 0.00266 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse

recovery time

Tj = 25°C

IF =1A VR = 30V

dIF/dt = 200 A/µs

IRM

Reverse

recovery current

Tj = 125°C

IF =60A VR = 160V

dIF/dt = 200 A/µs

10.4

13.5

tfr

Forward

recovery time

Tj = 25°C

IF =60A dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

560

VFP

Forward

recovery voltage

Tj = 25°C

IF =60A dIF/dt = 200 A/µs

2.5

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum

Unit

Rth (j-c)

Junction to case

Per diode

0.76

°C/W

Per device

0.43

Rth (j-c)

Coupling

0.1

°C/W

When the diodes 1 and 2 are used simultaneously:

∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

THERMAL PARAMETERS

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