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STH6N100 датащи(PDF) 3 Page - STMicroelectronics

номер детали STH6N100
подробное описание детали  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH6N100 датащи(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =500 V
ID =3 A
RG =50
Ω
VGS =10 V
(see test circuit, figure 3)
70
210
90
280
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =800 V
ID =6 A
RG =50
Ω
VGS =10 V
(see test circuit, figure 5)
180
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V
ID =6 A
VGS =10 V
125
15
55
150
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =800 V
ID =6 A
RG =50
Ω
VGS =10 V
(see test circuit, figure 5)
190
50
265
250
65
345
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
6
24
A
A
VSD (
∗)
Forward On Volt age
ISD =6 A
VGS =0
2
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =6 A
di/dt =100 A/
µs
VDD = 100 V
Tj =150
oC
(see test circuit, figure 5)
1100
31
57
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Areas For TO-218
Safe Operating Areas For ISOWATT218
STH6N100/FI
3/10



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