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L6393D013TR датащи(PDF) 15 Page - STMicroelectronics

номер детали L6393D013TR
подробное описание детали  Half-bridge gate driver
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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L6393D013TR датащи(HTML) 15 Page - STMicroelectronics

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L6393
Bootstrap driver
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where Qgate is the gate charge of the external power MOS, RDSon is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30 nC the drop on the
bootstrap DMOS is about 1 V, if the Tcharge is 5 µs. In fact:
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 6.
Bootstrap driver
V
drop
30nC
5
µs
--------------- 120
Ω 0.7V
∼
⋅
=
TO LOAD
D99IN1067
H.V.
HVG
ab
LVG
HVG
LVG
CBOOT
TO LOAD
H.V.
CBOOT
DBOOT
BOOT
VS
VS
VOUT
BOOT
VOUT



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