L6393 datasheet(11/20 Pages) STMICROELECTRONICS

11 / 20 page

L6393

Electrical characteristics

11/20

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Driving buffers section

Iso

10, 13

High/low side source short

circuit current

VIN = Vih (tp < 10 µs)

270

Isi

High/low side sink short

circuit current

VIN = Vil (tp < 10 µs)

430

Logic inputs

Vil

1, 2, 3

Low level logic threshold

voltage

0.83

Vih

High level logic threshold

voltage

2.21

IPHASEh

PHASE logic “1” input bias

current

PHASE = 15 V

175

260

µA

IPHASEl

PHASE logic “0” input bias

current

PHASE = 0 V

µA

IBRAKEh

BRAKE logic “1” input bias

current

BRAKE = 15 V

175

260

µA

IBRAKEl

BRAKE logic “0” input bias

current

BRAKE = 0 V

µA

ISDh

SD logic “1” input bias

current

SD = 15 V

100

µA

ISDl

SD logic “0” input bias

current

SD = 0 V

µA

RDSon is tested in the following way:

RDSon = [(VCC - VCBOOT1) - (VCC - VCBOOT2)] / [I1(VCC,VCBOOT1) - I2(VCC,VCBOOT2)]

where I1 is pin 14 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2.

Table 8.

DC opereation electrical characteristics (VCC = 15 V; TJ = +25 °C) (continued)

Table 9.

Sense comparator

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Vio

8, 9

Input offset voltage

±10

TBD

Iib

Input bias current

µA

Vol

Open drain low level

Output voltage

Iod = - 3 mA

0.5

td_comp

Comparator delay

CPOUT pulled to 5 V

through 100k

Ω resistor

110

210

Slew rate

CL = 180 nF, Rpu = 5 kΩ

TBD

µs

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