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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STW12NA60 датащи(PDF) 1 Page - STMicroelectronics |
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STW12NA60 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR s TYPICAL RDS(on) = 0.44 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM TYPE VDSS R DS(on) ID STH12NA60 STH12NA60FI STW12NA60 600 V 600 V 600 V <0. 6 Ω <0. 6 Ω <0. 6 Ω 12 A 7A 12 A November 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit STH/ STW12NA60 STH12NA60FI VDS Drain-source Voltage (VGS =0) 600 V VDG R Drain- gate Voltage (RGS =20 k Ω)600 V VGS Gate-source Voltage ± 30 V ID Drain Current (cont inuous) at T c =25 oC12 7 A ID Drain Current (cont inuous) at T c =100 oC7.6 4.4 A IDM( •) Drain Current (pulsed) 48 48 A Ptot Total Dissipation at Tc =25 oC 190 80 W Derating Factor 1. 52 0.64 W/ oC VISO I nsulat ion Withstand Voltage (DC) 4000 V Tstg St orage Temperat ure -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC ( •) Pulse width limited by safe operating area 1 2 3 TO-218 ISOWATT218 1 2 3 1 2 3 TO-247 1/11 |
Аналогичный номер детали - STW12NA60 |
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Аналогичное описание - STW12NA60 |
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