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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STH10NA50 датащи(PDF) 1 Page - STMicroelectronics |
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STH10NA50 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR s TYPICAL RDS(on) = 0.7 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM November 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit STW/STH10NA50 STH10NA50FI VDS Drain-source Voltage (VGS =0) 500 V VDG R Drain-gate Volt age (RGS =20 k Ω)500 V VGS Gate-source Voltage ± 30 V ID Drain Current (cont inuous) at T c =25 oC9.6 5.6 A ID Drain Current (cont inuous) at T c =100 oC6.1 3.5 A IDM( •) Drain Current (pulsed) 38 38 A Ptot Total Dissipation at Tc =25 oC 150 60 W Derating Factor 1.2 0.48 W/ oC VISO I nsulat ion Withstand Voltage (DC) 4000 V Tstg St orage Temperat ure -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC ( •) Pulse width limited by safe operating area TYPE VDSS R DS(on) ID STH10NA50 STH10NA50FI STW10NA50 500 V 500 V 500 V <0. 8 Ω <0. 8 Ω <0. 8 Ω 9.6 A 5.6 A 9.6 A 1 2 3 TO-218 ISOWATT218 1 2 3 1 2 3 TO-247 1/11 |
Аналогичный номер детали - STH10NA50 |
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Аналогичное описание - STH10NA50 |
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