CHA3513

6-18GHz Digital Variable Amplifier

Ref. : DSCHA3513-8144 - 23 May 08

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics on wafer

Tamb = +25°C

Vd = Pads B, D, F = 4.5V, Vg = Pads A, C, E tuned for Id = 300mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

6

18

GHz

G

Small signal gain @ Attenuator state 0dB (1)

6-17GHz

17-18GHz

17

15

19

16

dB

dB

ATT bit

Attenuator bit: State 5dB

State 10 dB 1

State 10dB 2

4.5

9.5

9.5

5

10

10

6.5

12

12

dB

dB

dB

ATT dyn

Attenuator range with 3bit

25

dB

Is

Small signal gain @ Attenuator state 0dB &

switch OFF (1)

-35

dB

P1dB

Output power at 1dB compression @ Attenuator

state 0dB (1)

18

dBm

Psat

Saturated Output power @ Attenuator state 0dB

(1)

20

dBm

NF

Noise figure @ Attenuator state 0dB

12

dB

RL_IN

Input Return Loss all attenuator states

-15

-9

dB

RL_OUT

Output Return Loss all attenuator states & switch

ON

-15

-9

dB

Vd

Drain bias DC voltage (

Pads B, D, F)

4.5

V

Id

Bias current @ small signal

300

350

mA

Vc

Control voltage for Attenuator bits & SPST switch

-5

0

V

(1) These values are representative of on-wafer measurements that are made without bonding

wires at the RF ports.