STD15NF10T4 datasheet(4/13 Pages) STMICROELECTRONICS

номер детали	STD15NF10T4

подробное описание детали	N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

PDF	13 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STD15NF10

4/13

Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 3.

On(1) /off states

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS = 0

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating

VDS = Max rating,

TC = 125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 12A

0.06

0.065

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15V, ID = 7.5A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

870

125

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 80V, ID = 24A

VGS = 10V

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30V, ID = 12A,

RG = 4.7Ω, VGS = 10V

Figure 12 on page 8

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