STGD7NB120S-1 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

STGD7NB120S-1

2/6

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

SWITCHING ON

Rthj-case

Thermal Resistance Junction-case Max

2.27

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

°C/W

Rthc-h

Thermal Resistance Case-heatsink Typ

0.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collectro-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

1200

VBR(ECR)

Emitter-Collectro Breakdown

Voltage

IC = 10mA, VGE = 0

ICES

Collector cut-off

(VGE = 0)

VCE = Max Rating, TC = 25 °C

µA

VCE = Max Rating, TC = 125 °C

250

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ±20V , VCE = 0

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250µA

VGE

Gate Emitter Voltage

VCE =2.5V, IC = 2A,

Tj = 25÷125°C

6.5

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 3.5 A

1.6

VGE = 15V, IC = 7 A

2.1

VGE = 15V, IC = 10 A

1.7

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE = 25 V , IC =7 A

2.5

4.5

Cies

Input Capacitance

VCE = 25V, f = 1 MHz, VGE = 0

430

Coes

Output Capacitance

Cres

Reverse Transfer

Capacitance

7pF

Gate Charge

VCE = 960V, IC = 7 A,

VGE = 15V

ICL

Latching Current

Vclamp = 960V , Tj = 150°C

RG = 1KΩ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VCC = 960 V, IC = 7 A

RG =1KΩ , VGE = 15 V

570

Rise Time

270

(di/dt)on

Turn-on Current Slope

VCC= 960 V, IC = 7 A, RG=1KΩ

VGE = 15 V, Tj = 125°C

800

A/µs

Eon

Turn-on Switching Losses

3.2

µJ

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