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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STC04IE170HV датащи(PDF) 1 Page - STMicroelectronics |
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STC04IE170HV датащи(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  November 2006 Rev 2 1/11 11 Order codes Part Number Marking Package Packing STC04IE170HV C04IE170HV TO247-4L HV Tube STC04IE170HV Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 W General features ■ High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time ■ In compliance with the 2002/93/EC European Directive Description The STC04IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. Applications ■ Aux SMPS for three phase mains Internal schematic diagrams Table 1. General features VCS(ON) IC RCS(ON) 0.7V 4A 0.17 Ω TO247-4L HV 1 2 3 4 www.st.com |
Аналогичный номер детали - STC04IE170HV |
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Аналогичное описание - STC04IE170HV |
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