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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STB5NB80 датащи(PDF) 1 Page - STMicroelectronics |
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STB5NB80 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STB5NB80 N - CHANNEL 800V - 1.8 Ω -5A- D2PAK PowerMESH ™ MOSFET s TYPICAL RDS(on) = 1.8 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING s EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM March 1999 1 3 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 800 V VDGR Drain- gat e Voltage (RGS =20 k Ω) 800 V VGS G ate-source Voltage ± 30 V ID Drain Current (cont inuous) at Tc =25 o C5 A ID Drain Current (cont inuous) at Tc = 100 oC3.2 A IDM( •) Drain Current (pulsed) 20 A Ptot T otal Dissipation at Tc =25 oC110 W Derating F act or 0.88 W / oC dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns Tstg Storage T emperature -65 to 150 oC Tj Max. Operating Junction T emperature 150 oC (*) Limited only by maximum temperature allowed ( 1)ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST B5NB80 800 V < 2.2 Ω 5A D2PAK TO-263 1/8 |
Аналогичный номер детали - STB5NB80 |
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Аналогичное описание - STB5NB80 |
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