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EMD12164P датащи(PDF) 21 Page - Emerging Memory & Logic Solutions Inc

номер детали EMD12164P
подробное описание детали  512M: 32M x 16 Mobile DDR SDRAM
PDF  45 Pages
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производитель  EMLSI [Emerging Memory & Logic Solutions Inc]
домашняя страница  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMD12164P датащи(HTML) 21 Page - Emerging Memory & Logic Solutions Inc

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EMD12164P
512M: 32M x 16 Mobile DDR SDRAM
Rev 0.0
Preliminary
Operations
Bank/Row Activation
The Bank Activation command is issued by holding CASB and WEB high with CSB and RASB low at the rising edge of
the clock(CK). The DDR SDRAM has four independent banks, so two bank select addresses(BA0, BA1) are required.
The Bank Activation command must be applied before any READ or WRITE operation is executed. The delay from the
Bank Activation command to the first READ or WRITE command must meet or exceed the minimum of RAS to CAS
delay time(tRCD min). Once a bank has been activated, it must be precharged before another Bank Activation com-
mand can be applied to the same bank. The minimum time interval between interleaved Bank Activation com-
mands(Bank A to Bank B and vice versa) is the Bank to Bank delay time(tRRD min).
Bank Activation Command Cycle
CKB
CK
Address
Command
0
1
2
Tn
Tn+1
Tn+2
Bank B
Row Addr.
Bank A
Row. Addr.
3
Bank A
Row Address
Bank A
Col. Addr.
Bank A
Activate
NOP
NOP
Write
with Auto
Precharge
Bank B
Activate
NOP
Bank A
Activate
Row Cycle Time(tRC)
: Don'tcare
RAS - CAS delay(tRCD)
RAS - RAS delay time(tRRD)



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