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RT1P440C датащи(PDF) 2 Page - Isahaya Electronics Corporation

номер детали RT1P440C
подробное описание детали  Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type
PDF  3 Pages
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производитель  ISAHAYA [Isahaya Electronics Corporation]
домашняя страница  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT1P440C датащи(HTML) 2 Page - Isahaya Electronics Corporation

  RT1P440C Datasheet HTML 1Page - Isahaya Electronics Corporation RT1P440C Datasheet HTML 2Page - Isahaya Electronics Corporation RT1P440C Datasheet HTML 3Page - Isahaya Electronics Corporation  
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〈Transistor〉
ＲＴ１P４４０Ｘ SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
RT1P440U
RT1P440M
RT1P440C
RT1P440S
UNIT
Ｖ
ＣＢＯ
Collector to Base voltage
-50
V
Ｖ
ＥＢＯ
Emitter to Base voltage
-6
V
Ｖ
ＣＥＯ
Collector to Emitter voltage
-50
V
Ｉ
 Ｃ
Collector current
-100
mA
Ｉ
 ＣＭ
Peak Collector current
-200
mA
Ｐ
Ｃ
Collector dissipation(Ta=25℃)
150
200
450
mW
Ｔｊ
Junction temperature
+150
+150
℃
Ｔｓｔｇ
Storage temperature
-55∼+150
-55∼+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Ｖ
（ＢＲ）ＣＥＯ
C to E break down voltage
I
 C=-100μA，RBE=∞
-50
V
Ｉ
 ＣＢＯ
Collector cut off current
V
CB=-50V，I E =0
-0.1
μA
ｈ
ＦＥ
DC forward current gain
V
CE=-5V，I C =-1mA
100
−
Ｖ
ＣＥ（ｓａｔ）
C to E saturation voltage
I
 C =-10mA，I B =-0.5mA
-0.3
V
Ｒ
１
Input resistance
33
47
61
kΩ
ｆ
Ｔ
Gain band width product
V
CE=-6V，I E =10mA
150
MHz
ISAHAYA ELECTRONICS CORPORATION
collector current - Input off voltage
-10
-100
-1000
-0
-0.2 -0.4 -0.6 -0.8
-1
-1.2 -1.4 -1.6 -1.8
-2
Input off voltage VI(OFF) (V)
VCE=-5V
Input on voltage-collector current
-0.1
-1
-10
-0.1
-1
-10
-100
collector current Ic (mA)
VCE=-0.2V
DC forward current gain -collector current
10
100
1000
-0.1
-1
-10
-100
collector current Ic(mA)
VCE=-5V



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