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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SIM400D06AV3 датащи(PDF) 2 Page - SemiWell Semiconductor |
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SIM400D06AV3 датащи(HTML) 2 Page - SemiWell Semiconductor |
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2 / 4 page  - 2 - SIM400D06AV3 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Min Typ Max Unit Test conditions Ciss Input capacitance ㅡ 24670 ㅡ pF VCE = 25V, VGE = 0V f = 1 MHz Coss Output capacitance ㅡ 1540 ㅡ Crss Reverse transfer capacitance ㅡ 732 ㅡ td(on) Turn-on delay time ㅡ 145 ㅡ ns Inductive Switching (125℃) VCC = 300V IC = 400A , VGE = ±15V RG = 2.2Ω tr Rise time ㅡ 60 ㅡ td(off) Turn-off delay time ㅡ 320 ㅡ tf Fall time ㅡ 80 ㅡ VBR Cathode-Anode breakdown Voltage 600 ㅡ ㅡ V IRM Maximum Reverse Leakage Current ㅡ ㅡ 350 ㎂ VR = 600V trr Reverse Recovery Time ㅡ 125 ㅡ ns IF = 400A, VR = 300V di / dt = 4000A /㎲ Qrr Reverse Recovery Charge ㅡ 20.3 ㅡ µC Thermal Characteristics Symbol Parameter Min Typ Max Unit RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.12 ℃ /W RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.22 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.03 - |
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