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SIM300D06AV3 датащи(PDF) 2 Page - SemiWell Semiconductor |
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SIM300D06AV3 датащи(HTML) 2 Page - SemiWell Semiconductor |
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2 / 4 page ![]() - 2 - SIM300D06AV3 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Min Typ Max Unit Test conditions Ciss Input capacitance ㅡ 18480 ㅡ pF VCE = 25V, VGE = 0V f = 1 MHz Coss Output capacitance ㅡ 1152 ㅡ Crss Reverse transfer capacitance ㅡ 548 ㅡ td(on) Turn-on delay time ㅡ 115 ㅡ ns Inductive Switching (125℃) VCC = 300V IC = 300A , VGE = ±15V RG = 3.3Ω tr Rise time ㅡ 45 ㅡ td(off) Turn-off delay time ㅡ 200 ㅡ tf Fall time ㅡ 45 ㅡ VBR Cathode-Anode breakdown Voltage 600 ㅡ ㅡ V IRM Maximum Reverse Leakage Current ㅡ ㅡ 350 ㎂ VR = 600V trr Reverse Recovery Time ㅡ 120 ㅡ ns IF = 300A, VR = 300V di / dt = 3100A /㎲ Qrr Reverse Recovery Charge ㅡ 13.5 ㅡ µC Thermal Characteristics Symbol Parameter Min Typ Max Unit RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.13 ℃ /W RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.21 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.03 - |
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