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SIM200D06AV2 датащи(PDF) 2 Page - SemiWell Semiconductor |
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SIM200D06AV2 датащи(HTML) 2 Page - SemiWell Semiconductor |
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2 / 4 page ![]() - 2 - SIM200D06AV2 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Min Typ Max Unit Test conditions Ciss Input capacitance ㅡ 9200 ㅡ pF VCE = 25V , VGE = 0V f = 1 MHz Coss Output capacitance ㅡ 580 ㅡ Crss Reverse transfer capacitance ㅡ 270 ㅡ td(on) Turn-on delay time ㅡ 145 ㅡ ns Inductive Switching (125℃) VCC = 300V IC = 200A, VGE = ±15V RG = 2Ω tr Rise time ㅡ 30 ㅡ td(off) Turn-off delay time ㅡ 340 ㅡ tf Fall time ㅡ 60 ㅡ VBR Cathode-Anode breakdown Voltage 600 ㅡ ㅡ V IRM Maximum Reverse Leakage Current ㅡ ㅡ 250 ㎂ VR = 600V trr Reverse Recovery Time ㅡ 130 ㅡ ns IF = 200A, VR = 300V di / dt = 2200A / ㎲ Qrr Reverse Recovery Charge ㅡ 9 ㅡ µC Thermal Characteristics Symbol Parameter Min Typ Max Unit RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.20 ℃ /W RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.3 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.025 - ※ Data and specifications subject to change without any of notice |
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