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SIM150D06AV1 датащи(PDF) 2 Page - SemiWell Semiconductor |
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SIM150D06AV1 датащи(HTML) 2 Page - SemiWell Semiconductor |
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2 / 4 page ![]() - 2 - SIM150D06AV1 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Min Typ Max Unit Test conditions Ciss Input capacitance ㅡ 9200 ㅡ pF VCE = 25V, VGE = 0V f = 1 MHz Coss Output capacitance ㅡ 580 ㅡ Crss Reverse transfer capacitance ㅡ 270 ㅡ td(on) Turn-on delay time ㅡ 125 ㅡ ns Inductive Switching (125℃) VCC = 300V IC = 150A , VGE = ±15V RG = 3.3Ω tr Rise time ㅡ 30 ㅡ td(off) Turn-off delay time ㅡ 340 ㅡ tf Fall time ㅡ 60 ㅡ VBR Cathode-Anode breakdown Voltage 600 650 ㅡ V IRM Maximum Reverse Leakage Current ㅡ ㅡ 250 ㎂ VR = 600V trr Reverse Recovery Time ㅡ 130 ㅡ ns IF = 150A, VR = 300V di / dt = 2100A /㎲ Qrr Reverse Recovery Charge ㅡ 6.9 ㅡ uC Thermal Characteristics Symbol Parameter Min Typ Max Unit RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.44 ℃ /W RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.77 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.05 - Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics |
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