STB30N10 datasheet(1/5 Pages) STMICROELECTRONICS

номер детали	STB30N10

подробное описание детали	N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

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STB30N10

N - CHANNEL 100V - 0.06

Ω - 30A - D2PAK

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.06

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

VERY HIGH CURRENT CAPABILITY

s

APPLICATION ORIENTED

CHARACTERIZATION

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

100

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

oC30

A

ID

Drain Current (continuous) at Tc = 100

oC21

A

IDM(

•)

Drain Current (pulsed)

120

A

Ptot

Total Dissipation at Tc = 25

oC

150

W

Derating Factor

1

W/

o C

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STB30N10

100 V

< 0.07

Ω

30 A

September 1998

1

3

D2PAK

TO-263

1/5

Аналогичный номер детали - STB30N10

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Аналогичное описание - STB30N10

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB20NE06	85Kb / 8P	N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET Jun-1999
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Unisonic Technologies	UTT30N10	181Kb / 5P	30A, 100V N-CHANNEL POWER MOSFET
Shindengen Electric Mfg...	P30LA10SL	1Mb / 7P	Power MOSFETs 100V, 30A, N-channel
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