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EM641FP16 датащи(PDF) 5 Page - Emerging Memory & Logic Solutions Inc

номер детали EM641FP16
подробное описание детали  256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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производитель  EMLSI [Emerging Memory & Logic Solutions Inc]
домашняя страница  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM641FP16 датащи(HTML) 5 Page - Emerging Memory & Logic Solutions Inc

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EM641FP16 Series
Low Power, 256Kx16 SRAM
5
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
Parameter
Symbol
70ns
Unit
Min
Max
Read Cycle Time
tRC
70
-
ns
Address Access Time
tAA
-
70
ns
Chip Select to output
tCO
-
70
ns
Output Enable to valid output
tOE
-
35
ns
UB, LB Acess time
tBA
70
ns
Chip select to low-Z output
tLZ
10
-
ns
UB, LB enable to low-Z output
tBLZ
10
-
ns
Output Enable to Low-Z output
tOLZ
5
-
ns
Chip disable to high-Z output
tHZ
0
25
ns
UB, LB disable to high-Z output
tBHZ
0
25
ns
Output disable to high-Z output
tOHZ
0
25
ns
Output hold from address change
tOH
10
-
ns
Parameter
Symbol
70ns
Unit
Min
Max
Write Cycle Time
tWC
70
-
ns
Chip Select to end of write
tCW
60
-
ns
Address Setup time
tAs
0
-
ns
Address valid to end of write
tAW
60
-
ns
UB, LB valid to end of write
tBW
60
-
ns
Write pulse width
tWP
55
-
ns
Write recovery time
tWR
0
-
ns
Write to ouput high-Z
tWHZ
0
25
ns
Data to write time overlap
tDW
30
ns
Data hold from write time
tDH
0
-
ns
End write to output low-Z
tOW
5
-
ns
READ CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40
oC to +85oC)
WRITE CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40
oC to +85oC)
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.2 to VCC-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 0.9V
Output Load (See right) : CL = 100pF+ 1 TTL
CL1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1=3070 ohm,
R2=3150 ohm
3. V
TM=1.8V
CL1)
VTM
3)
R1
2)
R2
2)



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