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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISA1235AC1MF датащи(PDF) 2 Page - Isahaya Electronics Corporation |
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ISA1235AC1MF датащи(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 4 page  〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS ISAHAYA ELECTRONICS CORPORATION GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 0 100 200 300 400 0.1 1 10 100 EMITTER CURRENT IE[mA] VCE=-6V COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 0 1 10 100 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE VCB[V] COMMON EMITTER TRANSFER -0 -10 -20 -30 -40 -50 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE TO EMITTER VOLTAGE VBE[V] VCE=-6V COMMON EMITTER OUTPUT IB=0 IB=0.02mA IB=0.04mA IB=0.06mA IB=0.08mA IB=0.10mA IB=0.12mA IB=0.14mA IB=0.16mA IB=0.18mA IB=0.20mA 0 10 20 30 40 50 012 345 COLLECTOR・EMITTER VOLTAGE VCE(V) COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE 0 50 100 150 200 250 050 100 150 AMBIENT TEMPERATURE Ta[℃] DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10 100 1000 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] VCE=-6V 100(@IC--1mA) |
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