EM610FV8T datasheet(2/11 Pages) EMLSI

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EM610FV8T Series

Low Power, 128Kx8 SRAM

merging Memory & Logic Solutions Inc.

FEATURES

• Process Technology : 0.18

µm Full CMOS

• Organization : 128K x 8 bit

• Power Supply Voltage : 2.7V ~ 3.6V

• Low Data Retention Voltage : 1.5V(Min)

• Three state output and TTL Compatible

• Package Type : 32-TSOP1

GENERAL DESCRIPTION

The EM610FV8T families are fabricated by EMLSI’s

advanced full CMOS process technology. The families

support industrial temperature range and Chip Scale

Package for user flexibility of system design. The fami-

lies also supports low data retention voltage for battery

back-up operation with low data retention current.

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc

Range

Speed

Power Dissipation

PKG

Type

Standby

(ISB1, Typ)

Operating

(ICC1.Max)

EM610FV8T

Industrial (-40 ~ 85

o C)

2.7V~3.6V

1) / 70ns

0.5

µA2)

3 mA

32-TSOP1

Name

Function

Name

Function

CS1,CS2 Chip select inputs

Write Enable input

Output Enable input

Vcc

Power Supply

A0~A16

Address Inputs

Vss

Ground

I/O1~I/O 8 Data Inputs/outputs

No Connection

FUNCTIONAL BLOCK DIAGRAM

1. The parameter is measured with 30pF test load.

PIN DESCRIPTION

A11

A13

CS2

A15

VCC

A16

A14

A12

A10

CS1

IO8

IO7

IO6

IO5

IO4

VSS

I/O3

I/O2

I/O1

32 - TSOP

Type1 - Forward

I/O Circuit

Column Select

Data

Cont

Pre-charge Circuit

Memory Array

1024 x 1024

A10 A11 A12 A13 A14

A15

CS1

I/O1 ~ I/O8

VCC

VSS

Control Logic

A16

CS2

2. Typical values are measured at Vcc=3.3V, TA=25

oC and not 100% tested.

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