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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST72E121 датащи(PDF) 81 Page - STMicroelectronics |
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ST72E121 датащи(HTML) 81 Page - STMicroelectronics |
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81 / 92 page  81/92 ST72E121 ST72T121 6 ELECTRICAL CHARACTERISTICS 6.1 ABSOLUTE MAXIMUM RATINGS This product contains devices to protect the inputs against damage due to high static voltages, how- ever it is advisable to take normal precaution to avoid application of any voltage higher than the specified maximum rated voltages. For proper operation it is recommended that VI and VO be higher than VSS and lower than VDD. Reliability is enhanced if unused inputs are con- nected to an appropriate logic voltage level (VDD or VSS). Power Considerations.The average chip-junc- tion temperature, TJ, in Celsius can be obtained from: TJ= TA + PD x RthJA Where: TA = Ambient Temperature. RthJA = Package thermal resistance (junction-to ambient). PD =PINT +PPORT. PINT =IDD xVDD (chip internal power). PPORT =Port power dissipation determined by the user) Note: Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Symbol Parameter Value Unit VDD Digital Supply Voltage -0.3 to 6.0 V VDDA Analog Supply and Reference Voltage VDD - 0.3 to VDD + 0.3 V VI Input Voltage VSS - 0.3 to VDD + 0.3 V VAI Analog Input Voltage (A/D Converter) VSS - 0.3 to VDD + 0.3 VSSA-0.3 to VDDA+0.3 V VO Output Voltage VSS - 0.3 to VDD + 0.3 V IVDD Total Current into VDD (source) 100 mA IVSS Total Current out of VSS (sink) 100 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -60 to 150 °C 81 |
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